A hole modulator for InGaN/GaN light-emitting diodes
نویسندگان
چکیده
منابع مشابه
Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
Articles you may be interested in Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple...
متن کاملGraded-host phosphorescent light-emitting diodes with high efficiency and reduced roll-off
Related Articles Encapsulating light-emitting electrochemical cells for improved performance Appl. Phys. Lett. 100, 193508 (2012) Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure J. Appl. Phys. 111, 093110 (2012) Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting d...
متن کاملEfficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
InGaN/GaN multiple-quantum-well MQW light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, r...
متن کاملEnhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.
We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes pen...
متن کاملAnalysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference tim...
متن کامل